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LPDDR5LPDDR4eMMCUFSDDR4SSDModuleSamsungLPDDR5LPDDR4eMMCUFSDDR4SSDModuleMicronLPDDR5LPDDR4eMMCUFSDDR4SSDModuleSK hynixLPDDR4LPDDR3DDR4DDR3eMCPNanyaSLC NANDSPI NANDeMMCMCPSkyhighPPI MRAMSPI MRAMSRAMMRAM KGDNetsolSLC NANDSPI NANDeMMCUFSKioxiaRGB MCUMotor MCUElectrical MCUGeneral MCUDemoKitSynwitAgilex™ FPGAStratix® FPGAArria® FPGAMAX® FPGACyclone® FPGAAlteraSpartan-7 FPGAsArtix-7 FPGAsKintex-7 FPGAsVirtex-7 FPGAsXilinxeMMCeMCPSSDKingstonLPDDR5LPDDR4eMMCDDR4RaysonpSRAMSDRAMDDR2DDR3DDR KGDPiecemakersNor FlashSPI NANDSLC NANDDDRWinbondNOR FlashSLC NANDSPI NANDeMMCMXICeMMCeMCPLPDDR3KowineMMCSSDSandiskSecurity chipSecurity MCUeSIMHEDNOR FLASHNAND FLASHBoya MicroMCUNor FlashZbitsemiRunjetic MCUSecurity chipRunjeticSecurity chipKGDIDKTSecurity chipGEN-FNeowine(ALPU)CMOS SensorPixart
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Netsol Parallel (PPI) MRAM

Netsol Parallel (PPI) MRAM
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Parallel STT-MRAM Products

NETSOL Parallel MRAM Products are ideal for applications that must store and retrieve data and programs quickly and frequently due to the non-volatility, virtually unlimited endurance and fast-write characteristics of STT-MRAM.

They are suited for code storage, data logging, backup memory and working memory in industrial designs and can replace Low power SRAM, FeRAM or nvSRAM with same functionality and non-volatility.

Key Features

  • 1Mb, 2Mb, 4Mb, 8Mb, 16Mb, 32Mb, 64Mb Density

  • Power Supply : 1.8V (1.71V ~ 1.98V)or 3.3V (2.7V ~ 3.6V)

  • Parallel asynchronous interface x16/x8 I/O

  • page read/write function for high performance

  • Data Retention : 10 years

  • Read Endurance : unlimited

  • Write Endurance : 1014

  • No external ECC required

  • Package Type : 48FBGA, 44TSOP2, 54TSOP2

Product List

Density
Part Number
Organization
VDD(V)
Access Time(ns)
Temperature
Package
Status
Data Sheet
1M bit
S3R1016V1M
64Kx16
2.70~3.60
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
S3R1008V1M
128Kx8
2.70~3.60
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
1M bit
S3R1016R1M
64Kx16
1.71~1.98
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
S3R1008R1M
128Kx8
1.71~1.98
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
2M bit
S3R2016V1M
128Kx16
2.70~3.60
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
S3R2008V1M
256Kx8
2.70~3.60
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
2M bit
S3R2016R1M
128Kx16
1.71~1.98
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
S3R2008R1M
256Kx8
1.71~1.98
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
4M bit
S3R4016V1M
256Kx16
2.70~3.60
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
S3R4008V1M
512Kx8
2.70~3.60
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
4M bit
S3R4016R1M
256Kx16
1.71~1.98
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
S3R4008R1M
512Kx8
1.71~1.98
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
8M bit
S3R8016V1M
512Kx16
2.70~3.60
70ns
-40℃ to 85℃
48FBGA, 54TSOP2
Mass Prod.
S3R8008V1M
1Mx8
2.70~3.60
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
8M bit
S3R8016R1M
512Kx16
1.71~1.98
70ns
-40℃ to 85℃
48FBGA, 54TSOP2
Mass Prod.
S3R8008R1M
1Mx8
1.71~1.98
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
16M bit
S3R1616V1M
1Mx16
2.70~3.60
70ns
-40℃ to 85℃
48FBGA, 54TSOP2
Mass Prod.
S3R1608V1M
2Mx8
2.70~3.60
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
16M bit
S3R1616R1M
1Mx16
1.71~1.98
70ns
-40℃ to 85℃
48FBGA, 54TSOP2
Mass Prod.
S3R1608R1M
2Mx8
1.71~1.98
70ns
-40℃ to 85℃
44TSOP2, 48FBGA
Mass Prod.
32M bit
S3R3216V1M
2Mx16
2.70~3.60
70ns
-40℃ to 85℃
48FBGA, 54TSOP2
Mass Prod.
S3R3216R1M
2Mx16
1.71~1.98
70ns
-40℃ to 85℃
48FBGA, 54TSOP2
Mass Prod.
64M bit
S3R6416V1M
4Mx16
2.70~3.60
70ns
-40℃ to 85℃
48FBGA
ES
S3R6416R1M
4Mx16
1.71~1.98
70ns
-40℃ to 85℃
48FBGA
ES

* ES : Engineer Sample, UD : Under Development
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